Source Drain
نویسندگان
چکیده
An advanced, multi-dimensional, and massively parallel simulation approach based on quantum mechanical concepts is introduced and its numerical algorithms briefly summarized. It has been implemented in a computer aided design tool called OMEN, specifically dedicated to next generation nanoelectronic devices. OMEN can treat electron, hole, and phonon (thermal) transport in realistically sized ultra-scaled transistors and thermogenerators with an atomistic resolution of the simulation domain. Its accuracy, usefulness, and parallel performance are demonstrated with the help of four device applications.
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